text.skipToContent text.skipToNavigation
Product Specification Section
onsemi FDMS86200 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 21mΩ
Rated Power Dissipation: 104|W
Qg Gate Charge: 26nC
Package Style:  POWER 56-8
Mounting Method: Surface Mount
Features & Applications

The FDMS86200 is a N-Channel MOSFET.

Features:

  • Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A
  • Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

Applications:

  • DC-DC Conversion
Pricing Section
Global Stock:
39,000
USA:
39,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
11 Weeks
Minimum Order:
3000
Multiple Of:
3000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,775.00
USD
Quantity
Unit Price
3,000+
$0.925