Manufacturer Part #
STGF10NB60SD
STGF10NB60SD Series 600 V 23 A Through Hole Silicon IGBT - TO-220FP
Product Specification Section
STMicroelectronics STGF10NB60SD - Product Specification
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
Active
STMicroelectronics STGF10NB60SD - Technical Attributes
Attributes Table
CE Voltage-Max: | 600V |
Collector Current @ 25C: | 23A |
Power Dissipation-Tot: | 25W |
Gate - Emitter Voltage: | ±20V |
Pulsed Collector Current: | 80A |
Collector - Emitter Saturation Voltage: | 1.75V |
Turn-on Delay Time: | 0.7µs |
Turn-off Delay Time: | 1.2µs |
Qg Gate Charge: | 33nC |
Reverse Recovery Time-Max: | 37ns |
Leakage Current: | 100nA |
Input Capacitance: | 610pF |
Thermal Resistance: | 62.5°C/W |
Operating Temp Range: | -55°C to +150°C |
No of Terminals: | 3 |
Package Style: | TO-220FP (TO-220FPAB) |
Mounting Method: | Through Hole |
Pricing Section
Global Stock:
18
Germany (Online Only):
18
On Order:
0
Factory Lead Time:
14 Weeks
Quantity
Web Price
50
$0.75
200
$0.715
750
$0.685
2,000
$0.665
5,000+
$0.63
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220FP (TO-220FPAB)
Mounting Method:
Through Hole