Manufacturer Part #
FS380R12A6T4LBBPSA1
1200V, 380A, IGBT, HybridPACK Drive, Module
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:6 per Tray Package Style:Module Mounting Method:Chassis Mount | ||||||||||
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Infineon FS380R12A6T4LBBPSA1 - Product Specification
Shipping Information:
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Introduction of an additional wafer production and wafer test location at Infineon Technologies (Kulim) Sdn. Bhd., Kulim, Malaysia for IGBT4A, and change of wafer diameter from 150 mm to 200 mm for EC4A diodes in 1200V modules Reason/Motivation: For IGBT4A, expansion of wafer production to assure continuity of supply and enable flexible manufacturing. For EC4A, the 200 mm wafer manufacturing technology is the 'state of the art' wafer manufacturing technology at Infineon. Therefore, the diodes will be shifted from 150 mm wafer diameter to 200 mm wafer diameter. Time schedule Final qualification report available First samples available on request Intended start of delivery [1] 2022-03-01 Last order date (LOD) [2] 2021-11-30 Last delivery date (LDD) [3] 2022-04-30
Part Status:
Infineon FS380R12A6T4LBBPSA1 - Technical Attributes
| CE Voltage-Max: | 1200V |
| Power Dissipation-Tot: | 870W |
| Gate - Emitter Voltage: | 20V |
| Pulsed Collector Current: | 760A |
| Collector - Emitter Saturation Voltage: | 1.6V |
| Turn-on Delay Time: | 0.13µs |
| Turn-off Delay Time: | 0.47µs |
| Qg Gate Charge: | 1750nC |
| Leakage Current: | 400nA |
| Input Capacitance: | 19nF |
| Operating Temp Range: | -40°C to +150°C |
| No of Terminals: | 33 |
| Package Style: | Module |
| Mounting Method: | Chassis Mount |
Available Packaging
Package Qty:
6 per Tray
Package Style:
Module
Mounting Method:
Chassis Mount