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Manufacturer Part #

GNP1070TC-ZE2

650V 20A 70 mOhm N-ch DFN8080K, E-mode Gallium-Nitride(GaN) FET

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Date Code:
Product Specification Section
ROHM GNP1070TC-ZE2 - Technical Attributes
Attributes Table
Product Status: Active
Technology: GaNFET (Gallium Nitride)
Fet Type: N-Ch
Drain Current: 20A
No of Channels: 1
Qg Gate Charge: 5.2nC
Drain-to-Source Voltage [Vdss]: 650V
Gate-Source Voltage-Max [Vgss]: 6V
Input Capacitance: 200pF
Rated Power Dissipation: 56W
Operating Temp Range: 150°C
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
1
Multiple Of:
3500
Total
$3.49
USD
Quantity
Unit Price
1
$3.49
15
$3.38
100
$3.31
400
$3.26
2,000+
$3.18