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Manufacturer Part #

GAN7R0-150LBEZ

150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Gri

Product Specification Section
Nexperia GAN7R0-150LBEZ - Technical Attributes
Attributes Table
Product Status: Active
Technology: GaNFET (Gallium Nitride)
Fet Type: N-Ch
Drain Current: 60A
No of Channels: 1
Qg Gate Charge: 12nC
Drain-to-Source Voltage [Vdss]: 100V
Gate-Source Voltage-Max [Vgss]: 6V
Input Capacitance: 1000pF
Rated Power Dissipation: 394W
Operating Temp Range: -40°C to +150°C
Package Style:  WLCSP-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
6 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,725.00
USD
Quantity
Unit Price
2,500+
$1.09