Référence fabricant
SST26VF016-80-5I-S2AE
SST26VF Series 16 Mbit 2 M x 8 3 V Serial Quad I/O Flash Memory - SOIC-8
| | |||||||||||
| | |||||||||||
| Nom du fabricant: | Microchip | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :90 par Tube Style d'emballage :SOIC-8 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Microchip SST26VF016-80-5I-S2AE - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change:Qualification of MTAI as a new assembly site for SST26VF016-80-5I-S2AE and SST26VF016-80-5I-S2AE-T catalog part numbers (CPN) available in 8L SOIJ (.208in) package.Reason for Change:To improve manufacturability and on-time delivery performance by qualifying MTAI as a new assembly site.
Revision History:July 28, 2022: Issued initial notification.October 7, 2022: Issued final notification. Attached the Qualification Report. Provided estimated first ship date to be on October 8, 2022. Corrected typo in reason for change from �assembly site� to �final test site�.October 11, 2022. Corrected qualification report title from "Plan" to "Report".Description of Change:Qualification of MTAI as a new final test site for selected SST26VF016-80-5I-S2AE, SST26VF016-80-5I-QAE, SST26VF016-80-5I-S2AE-T andSST26VF016-80-5I-QAE-T catalog part numbers (CPN) available in 8L SOIJ (.208in) and 8L TDFN-S (6x5x0.8mm) packages.Reason for Change:To improve cycle time by qualifying MTAI as a new final test site.
Revision History:July 28, 2022: Issued initial notification.October 7, 2022: Issued final notification. Attached the Qualification Report. Provided estimated first ship date to be on October 28, 2022. Corrected typo in reason for change from "assembly site" to "final test site".Description of Change:Qualification of MTAI as a new final test site for selected SST26VF016-80-5I-S2AE, SST26VF016-80-5I-QAE, SST26VF016-80-5I-S2AE-T and SST26VF016-80-5I-QAE-T catalog part numbers (CPN) available in 8L SOIJ (.208in) and 8L TDFN-S (6x5x0.8mm) packages.Reason for Change:To improve cycle time by qualifying MTAI as a new final test site.Estimated First Ship Date:October 28, 2022 (date code: 2244)
PCN Status:Initial NotificationPCN Type:Manufacturing ChangeDescription of Change:Qualification of MTAI as a new final test site for selected SST26VF016-80-5I-S2AE, SST26VF016-80-5I-QAE, SST26VF016-80-5I-S2AE-T and SST26VF016-80-5I-QAE-T catalog part numbers (CPN) available in 8L SOIJ (.208in) and 8L TDFN-S (6x5x0.8mm) packages.Reason for Change:To improve cycle time by qualifying MTAI as a new assembly site.Change Implementation Status:In ProgressEstimated Qualification Completion Date:August 2022
Statut du produit:
Microchip SST26VF016-80-5I-S2AE - Caractéristiques techniques
| Clock Frequency-Max: | 80MHz |
| Memory Density: | 16Mb |
| Memory Organization: | 2 M x 8 |
| Supply Voltage-Nom: | 2.7V to 3.6V |
| Temperature Grade: | Industrial |
| Style d'emballage : | SOIC-8 |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The SST26VF016-80-5I-S2AE is a part of SST26VF series Flash Memory. It has an standard industria operating temperature ranging from -40°C to +85°C, it comes in SOIC-8 package.
The SST26VF016 Serial Quad I/O (SQI) flash device utilizes a 4-bit multiplexed I/O serial interface to boost performance while maintaining the compact form factor of standard serial flash devices. Operating at frequencies reaching 80 MHz, the SST26VF016 / SST26VF032 enables minimum latency execute-in-place (XIP) capability without the need for code shadowing on an SRAM.
Features:
- Serial Interface Architecture - Nibble-wide multiplexed I/O’s with SPI-like serial command structure: Mode 0 and Mode 3 - Single-bit, SPI backwards compatible: Read, Fast Read, and JEDEC ID Readit/s sustained data rate
- Continuous Linear Burst Modes – 8/16/32/64 Byte linear burst with wrap-around
- Low Power Consumption: – Active Read current: 12 mA (typical @ 80 MHz) – Standby Current: 8 μA (typical)
- Fast Erase and Byte-Program: – Chip-Erase time: 35 ms (typical) – Sector-/Block-Erase time: 18 ms (typical)
- Page-Program – 256 Bytes per page – Fast Page Program time in 1 ms (typical)
- Flexible Erase Capability – Uniform 4 KByte sectors – Four 8 KByte top and bottom parameter overlay blocks – Two 32 KByte top and bottom overlay blocks – Uniform 64 KByte overlay blocks - 62 Blocks
- Software Write Protection – Individual Block-Locking - 64 KByte blocks, two 32 KByte blocks, and eight 8
- Packages Available – 8-contact WSON (6mm x 5mm) – 8-lead SOIC (200 mil)
- All devices are RoHS compliant
View the complete family of SST26VF series Flash Memory
Emballages disponibles
Qté d'emballage(s) :
90 par Tube
Style d'emballage :
SOIC-8
Méthode de montage :
Surface Mount