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Référence fabricant

MR4A16BMA35

MR4A16B Series 1 M x 16 Bit 3.3 V 35 ns Asynchronous MRAM Memory - BGA-48

Modèle ECAD:
Nom du fabricant: Everspin Technologies
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
Everspin Technologies MR4A16BMA35 - Caractéristiques techniques
Attributes Table
Memory Density: 16Mb
Interface Type: Parallel
Memory Organization: 1 M x 16
Supply Voltage-Nom: 3V to 3.6V
Access Time-Max: 35ns
Temperature Range: 0°C to 70°C
Style d'emballage :  BGA-48
Méthode de montage : Surface Mount
Fonctionnalités et applications

The MR4A16BMA35 is a magnetoresistive random access memory (MRAM) device organized as 1,048,576 words of 16 bits. It is available in a small footprint 48-pin ball grid array (BGA) package.

This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. The data is always non-volatile for greater than 20 years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent  writes with voltage out of specification.

Features:

  • +3.3 Volt power supply
  • Fast 35 ns read/write cycle
  • SRAM compatible timing
  • Unlimited read & write endurance
  • Data always non-volatile for >20 years at temperature
  • RoHS-compliant small footprint BGA and TSOP2 package
  • AEC-Q100 Grade 1 option in TSOP2 package.

Benefits:

  • One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs
  • Improves reliability by replacing battery-backed SRAM

View the available MR4A16B series of MRAMs

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
20 Semaines
Commande minimale :
736
Multiples de :
368
Total 
22 367,04 $
USD
Quantité
Prix unitaire
368+
$30.39
Product Variant Information section