Référence fabricant
MR4A16BMA35
MR4A16B Series 1 M x 16 Bit 3.3 V 35 ns Asynchronous MRAM Memory - BGA-48
Product Specification Section
Everspin Technologies MR4A16BMA35 - Spécifications du produit
Informations de livraison:
L'article ne peut être envoyé à certains pays. Voir la liste
L'article ne peut pas être envoyé aux pays suivants:
ECCN:
EAR99
Informations PCN:
Statut du produit:
Actif
Actif
Everspin Technologies MR4A16BMA35 - Caractéristiques techniques
Attributes Table
Memory Density: | 16Mb |
Interface Type: | Parallel |
Memory Organization: | 1 M x 16 |
Supply Voltage-Nom: | 3V to 3.6V |
Access Time-Max: | 35ns |
Temperature Range: | 0°C to 70°C |
Style d'emballage : | BGA-48 |
Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The MR4A16BMA35 is a magnetoresistive random access memory (MRAM) device organized as 1,048,576 words of 16 bits. It is available in a small footprint 48-pin ball grid array (BGA) package.
This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. The data is always non-volatile for greater than 20 years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Features:
- +3.3 Volt power supply
- Fast 35 ns read/write cycle
- SRAM compatible timing
- Unlimited read & write endurance
- Data always non-volatile for >20 years at temperature
- RoHS-compliant small footprint BGA and TSOP2 package
- AEC-Q100 Grade 1 option in TSOP2 package.
Benefits:
- One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs
- Improves reliability by replacing battery-backed SRAM
View the available MR4A16B series of MRAMs
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Délai d'usine :
20 Semaines
Quantité
Prix unitaire
368+
$30.39
Product Variant Information section
Emballages disponibles
Qté d'emballage(s) :
368 par Tray
Style d'emballage :
BGA-48
Méthode de montage :
Surface Mount