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Everspin Technologies | MR0A08BMA35

Référence fabricant

MR0A08BMA35

MR0A08 Series 128 K x 8 Bit 3.3 V 35 ns Asynchronous MRAM Memory - BGA-48

Modèle ECAD:
Nom du fabricant: Everspin Technologies
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
Everspin Technologies MR0A08BMA35 - Caractéristiques techniques
Attributes Table
Memory Density: 1Mb
Interface Type: Parallel
Memory Organization: 128 K x 8
Supply Voltage-Nom: 3.3V
Access Time-Max: 35ns
Temperature Range: -40°C to +125°C
Style d'emballage :  BGA-48
Méthode de montage : Surface Mount
Fonctionnalités et applications
The MR0A08BMA35 is a 128K x 8 magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits.

This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. It is available in 8 mm x 8 mm, 48-pin ball grid array (BGA) package and provides highly reliable data storage over a wide range of temperatures.

Features:

  • 3.3 Volt power supply
  • Fast 35 ns read/write cycle
  • SRAM compatible timing
  • Native non-volatility
  • Unlimited read & write endurance
  • Data always non-volatile for >20-years at temperature
  • Commercial and industrial temperatures
  • RoHS-Compliant TSOP2, BGA and SOIC packages

Benefits:

  • One memory replaces FLASH, SRAM, EEPROM and BBSRAM in system for simpler, more efficient design
  • Improves reliability by replacing battery-backed SRAM

View the available MR0A08 series of MRAMs

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
20 Semaines
Commande minimale :
1024
Multiples de :
1024
Total 
11 345,92 $
USD
Quantité
Prix unitaire
1 024+
$11.08
Product Variant Information section