Référence fabricant
25AA1024-I/P
25AA1024 Series 1 Mbit (128K x 8) 5.5 V SPI Bus Serial EEPROM - PDIP-8
Microchip 25AA1024-I/P - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Microchip has released a new Product Documents for the 25AA1024 1 Mbit SPI Bus Serial EEPROM Device Data Sheet of devicesDescription of Change:1) Updated Pin Description section2) Updated Figure 1-33) Updated Package Drawings4) Added Product Identification System for Automotive5) Replaced terminology �Master� and �Slave� with �Host� and �Client�, respectively.6) Reformatted some sections for better readabilityImpacts to Data Sheet: See above details.Reason for Change: To Improve ProductivityChange Implementation Status: CompleteDate Document Changes Effective: 14 Oct 2021
Statut du produit:
Microchip 25AA1024-I/P - Caractéristiques techniques
Memory Density: | 1Mb |
Memory Organization: | 128 K x 8 |
Supply Voltage-Nom: | 1.8V to 5.5V |
Clock Frequency-Max: | 20MHz |
Write Cycle Time-Max (tWC): | 6ms |
Style d'emballage : | PDIP-8 |
Méthode de montage : | Through Hole |
Fonctionnalités et applications
The 25AA1024 series of 1024 Kbit serial EEPROM memory with byte-level and page level. It also features Page, Sector and Chip erase functions typically associated with Flash-based products. These functions are not required for byte or page write operations. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled by a Chip Select (CS) input.
Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. The 25AA1024 is available in standard packages including 8-lead PDIP and SOIJ, and advanced 8-lead DFN package. All devices are Pb-free.
Features:
- 20 MHz max. Clock Speed
- Byte and Page-level Write Operations:
- 256 byte page
- 6 ms max. write cycle time
- No page or sector erase required
- Low-Power CMOS Technology:
- Max. Write current: 5 mA at 5.5 V, 20 MHz
- Read current: 7 mA at 5.5 V, 20 MHz
- Standby current: 1 μA at 2.5 V (Deep power-down)
- Electronic Signature for Device ID
- Self-Timed Erase and Write Cycles:
- Page Erase (6 ms max.)
- Sector Erase (10 ms max.)
- Chip Erase (10 ms max.)
- Sector Write Protection (32K byte/sector):
- Protect none, 1/4, 1/2 or all of array
- Built-In Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
- High Reliability:
- Endurance: 1 M erase/write cycles
- Data Retention: >200 years
- ESD Protection: 4000 V
- Temperature Ranges Supported:
- Industrial (I): -40°C to +85°C
- Pb-free and RoHS Compliant
Learn more about the 25AA1024 family of EEPROM
Emballages disponibles
Qté d'emballage(s) :
60 par Tube
Style d'emballage :
PDIP-8
Méthode de montage :
Through Hole