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Manufacturer Part #

NTH4L023N065M3S

N-Channel 650 V 40 A 245 W Through Hole Silicon Carbide Mosfet - TO-247-4L

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi NTH4L023N065M3S - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 67A
Input Capacitance: 1952pF
Power Dissipation: 245W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
50 Weeks
Minimum Order:
450
Multiple Of:
450
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Total
$2,394.00
USD
Quantity
Web Price
450+
$5.32
Product Variant Information section