Référence fabricant
MSC017SMA120B4
1200 V 113A 455W Through Hole Silicon Carbide N-Channel Power MOSFET-TO-247-4
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| Nom du fabricant: | Microchip | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :1 par Bulk Style d'emballage :TO-247-4 Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
Microchip MSC017SMA120B4 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change:Qualification Microchip Technology Colorado � Fab 5 (MCSO) as an additional fabrication site for selected 700V, 1200V and 1700V SiC MOSFET products of MSCxxxSMA070xx, MSCxxxSMA120xx, MSCxxxSMA170xx device families available in die sales products, 2L TO-268, 4L SOT-227, 3L/4L TO-247 and 7L TO-263.Reason for Change:To improve productivity and on-time delivery performance by qualifying MCSO as an additional fabrication site.
Description of Change:Implementation of Die Overcoat material with Polyimide layer selected Microsemi SIC MOSFET product of MSCxxxSMA070, MSCxxxSMA120, and MSCxxxSMA170 device families in DICE, SOT-227, TO-247, TO-263 and TO-268 packages.Reason for Change:To improve productivity by implementing Die Overcoat (polyimide layer)
PCN Status:Final NotificationDescription of Change:Implement top marking changes for selected PSDS (Power Switching Discrete Solutions) Silicon Carbide (SiC) Products available in TO-247, TO-263, TO-268, TO-220 and SOT-227 packages.Reason for Change:To improve productivity by standardizing the top marking as part of the integration of Microsemi and Microchip.Change Implementation Status:In ProgressEstimated First Ship Date:March 31, 2023 (date code: 2313)
PCN Status:Final NotificationPCN Type:Manufacturing ChangeMicrochip Parts Affected:Please open one of the files found in the Affected CPNs section.Note: For your convenience Microchip includes identical files in two formats (.pdf and .xls)Description of Change:Implement Microchip Inner Labels and documentation changes for selected PSDS (Power Switching Discrete Solutions) Silicon Carbide (SiC) Products.Pre and Post Change Summary: See attachedImpacts to Data Sheet:NoneChange ImpactNoneReason for Change:To improve productivity by standardizing the packing method as part of the integration of Microsemi and Microchip.Change Implementation Status:In ProgressEstimated First Ship Date:February 17, 2023 (date code: 2307)Note: Please be advised that after the estimated first ship date customers may receive pre and post change parts.Time Table Summary: See attached
Statut du produit:
Microchip MSC017SMA120B4 - Caractéristiques techniques
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 113A |
| Input Capacitance: | 5280pF |
| Power Dissipation: | 455W |
| Operating Temp Range: | -55°C to +175°C |
| Style d'emballage : | TO-247-4 |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
1 par Bulk
Style d'emballage :
TO-247-4
Méthode de montage :
Through Hole