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Manufacturer Part #

IMZA65R072M1HXKSA1

Single N-Channel 650 V 28 A 96 W CoolSiC™ Through Hole- Mosfet - TO-247-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code:
Product Specification Section
Infineon IMZA65R072M1HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 28A
Input Capacitance: 744pF
Power Dissipation: 96W
Operating Temp Range: -55°C to +150°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
240
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
240
Multiple Of:
30
Total
$1,048.80
USD
Quantity
Web Price
30
$4.55
90
$4.43
150
$4.37
600
$4.22
900+
$4.13