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STMicroelectronics | STW88N65M5

Référence fabricant

STW88N65M5

STW88N65M5 Series 650 V 0.029 Ohm 84 A N-Channel MDmesh™ V Power Mosfet-TO-247-3

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date: 2425
Product Specification Section
STMicroelectronics STW88N65M5 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.024Ω
Rated Power Dissipation: 450|W
Qg Gate Charge: 204nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 84A
Gate Source Threshold: 4V
Style d'emballage :  TO-247-3
Méthode de montage : Flange Mount
Fonctionnalités et applications

The STW88N65M5 is a N-channel MDmesh™ V Power MOSFET. This device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product has extremely low on-resistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features:

  • Worldwide best RDS(on) in TO-247
  • Higher VDSS rating
  • Higher dv/dt capability
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested

Applications:

  • Servers
  • PV inverters
  • Telecom infrastructure
  • Multi kW battery chargers
Pricing Section
Stock global :
1 200
d’Allemagne (En ligne seulement):
1 200
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
16 Semaines
Commande minimale :
30
Multiples de :
30
Total 
263,70 $
USD
Quantité
Prix Internet
30
$8.79
90
$8.72
120
$8.70
300
$8.64
450+
$8.58
Product Variant Information section
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