text.skipToContent text.skipToNavigation

Livraison gratuite aux États-Unis continentaux à partir de 50 $ US. Des conditions s'appliquent

  1. home
  2. Semiconducteurs
  3. Discrets
  4. Transistors
  5. Mosfet
  6. STD3NK90ZT4

STMicroelectronics | STD3NK90ZT4

Référence fabricant

STD3NK90ZT4

N-Channel 900 V 4.8 Ohm Surface Mount SuperMesh Power MosFet - TO-252-3

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STD3NK90ZT4 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 900V
Drain-Source On Resistance-Max: 4.8Ω
Rated Power Dissipation: 90|W
Qg Gate Charge: 22.7nC
Style d'emballage :  TO-252-3 (DPAK)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The STD3NK90ZT4 is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Features:

  • Typical RDS(on) = 4.1 W
  • Extremely high dv/dt Capability
  • 100% Avalanche tested
  • Gate Charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing Repeatability

Applications:

  • High Current, High Speed Switching
  • IDEAL for off-line power supplies,ADdaptors and PFC
  • Lighting
Pricing Section
Stock global :
0
d’Allemagne (En ligne seulement):
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
13 Semaines
Commande minimale :
5000
Multiples de :
2500
Total 
4 000,00 $
USD
Quantité
Prix Internet
2 500
$0.815
5 000
$0.80
7 500
$0.79
10 000
$0.785
12 500+
$0.765
Product Variant Information section