Référence fabricant
SIZF5302DT-T1-RE3
30 V 28.1 A 3.2mOhm Dual N-Channel MOSFET - PowerPAIR® 3x3FS
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Vishay SIZF5302DT-T1-RE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: The wafer plating process for commercial power MOSFET products will move to a new building within the same Laguna Technopark. Classification of Change: In order to increase the capacity, Vishay Siliconix has moved the Philippines wafer plating facility in a larger building with the same equipment, same process, and same personnel.m Expected Influence on Quality/Reliability/Performance: There will be no effect on performance, quality or reliability and no change to form, fit, or function of the shipped devices.Vishay Brand(S): Vishay Siliconix Time Schedule: Start Shipment Date: Mon Feb 6, 2023
Statut du produit:
Vishay SIZF5302DT-T1-RE3 - Caractéristiques techniques
| Product Status: | Active |
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 3.2mΩ |
| Rated Power Dissipation: | 3.8W |
| Qg Gate Charge: | 14.8nC |
| Gate-Source Voltage-Max [Vgss]: | 16V |
| Drain Current: | 28.1A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 23ns |
| Rise Time: | 6ns |
| Fall Time: | 6ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2V |
| Input Capacitance: | 1030pF |
| Series: | TrenchFET® Gen V |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Méthode de montage :
Surface Mount