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Référence fabricant

PSMN3R3-40YS,115

PSMN3R3 Seriesl 40 V 3.3 mOhm SMT N-Channel Standard Level MOSFET - LFPAK-4

Modèle ECAD:
Nom du fabricant: Nexperia
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
Nexperia PSMN3R3-40YS,115 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 3.3mΩ
Rated Power Dissipation: 117W
Qg Gate Charge: 49nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 21ns
Turn-off Delay Time: 38ns
Rise Time: 21ns
Fall Time: 14ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: TrenchMOS
Input Capacitance: 2754pF
Style d'emballage :  SOT-669
Méthode de montage : Surface Mount
Fonctionnalités et applications

The PSMN3R3-40YS,115 is a Part of PSMN Series Standard level N-channel MOSFET Transistor.It has an operating Temperature of -55°C to 175°C.It Comes in a package of LFPAK-4 .

This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Features:

  • Advanced TrenchMOS provides low RDSon and low gate charge
  • High efficiency gains in switching power converters
  • Improved mechanical and thermal characteristics
  • LFPAK provides maximum power density in a Power SO8 package

Applications:

  • DC-to-DC convertors
  • Lithium-ion battery protection
  • Load switching
  • Motor control
  • Server power supplies

View the Complete Series of PSMN Mosfet Tranistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
10 Semaines
Commande minimale :
1500
Multiples de :
1500
Total 
712,50 $
USD
Quantité
Prix unitaire
1 500
$0.475
3 000
$0.47
4 500
$0.465
7 500+
$0.455
Product Variant Information section