onsemi | NDS352AP

The NDS352AP is a Part of NDS Series P-Channel Logic Level Enhancement mode power field effect transistors are produced using high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Features:

• -0.9 A, -30 V
• RDS(ON) = 0.5 O @ VGS = -4.5 V
• RDS(ON) = 0.3 O @ VGS = -10 V
• Industry standard outline SOT-23 surface mount package using proprietary Super SOT-3 design for superior thermal and electrical capabilities
• High density cell design for extremely low RDS(on)
• Exceptional on-resistance and maximum DC current capability

View the Series of P-Channel MOSFETs