Référence fabricant
IXTH6N120
Single N-Channel 1200 V 700 mOhm 300 W Power Mosfet - TO-247 AD
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| Nom du fabricant: | IXYS | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :30 par Tube Style d'emballage :TO-247AD Méthode de montage :Flange Mount | ||||||||||
| Code de date: | 2431 | ||||||||||
IXYS IXTH6N120 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
DESCRIPTION OF CHANGE: As a part of Littelfuse endeavors to improve the manufacturing footprint and to enhance capacity, it has been decided to introduce a new TO-247 backend manufacturing ATXWH in China. The change is affecting the parts listed in appendix B. The country of origin for TO247 will possibly be Korea, Philippines, and China
DESCRIPTION OF CHANGE: As a part of Littelfuse endeavors to improve the manufacturing footprint and to enhance capacity, it has been decided to introduce a new TO-247 backend manufacturing ATXWH in China. The change is affecting the parts listed in appendix B. The country of origin for TO247 will possibly be Korea, Philippines, and China
SUBJECT: Assembled Device Marking Format Changes and Outer Box/Bag Label Format Changes - Change to the assembled device marking format The change affects the date code and tracking number identification. This change does not affect the form, fit or function of the product. See attached for more details - Change to the box label format: The paper sticker label found on the outer box or bag will see a format change that incorporates the Littelfuse logo along with the IXYS logo. The printed information remains the same (PN, Qty, Lot #, date code, country of origin). The change allows for a improved readability. This change does not affect the form, fit or function of the product. REMARKS: This changes from the original IXYS Corporation marking/labeling format to the new IXYS LLC-USA format is being done to conform to the SAP product management system requirements of our parent company Littelfuse Corporation.
Statut du produit:
IXYS IXTH6N120 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain-Source On Resistance-Max: | 2.6Ω |
| Rated Power Dissipation: | 300|W |
| Qg Gate Charge: | 56nC |
| Style d'emballage : | TO-247AD |
| Méthode de montage : | Flange Mount |
Fonctionnalités et applications
IXYS is a state of the art leader in MOSFET technology through the IXTH series. This cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.
The ruggedness that this technology offers combined with a low resistance factor results in very low power dissipation, in low voltage, and high current power switching applications. This series features wide-ranging operating junction temperatures (–55 degrees C to 150 degrees C) and is ideal for applications that require large amounts of power.
By delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, IXYS firmly believes in innovation through its divisional focused approach. This has enabled IXYS to become well diversified in the consumer, military & aerospace, automotive and transportation markets.
Perfect for both commercial and industrial applications, the IXTH6N120 (this part is lead free) has the capacity to operate at 1200 V within an operating temperature range of 150 degrees C. The net result translates to a lower resistance (RDS (on) = 2.4 Ohms). Avalanche rated, the IXTH6N120 is able to reduce power dissipation levels to approximately 300 watts. The IXTH6N120 provides high speed, robust efficiency combined with low on-resistance and cost-effectiveness all in a TO-247 package format.
Emballages disponibles
Qté d'emballage(s) :
30 par Tube
Style d'emballage :
TO-247AD
Méthode de montage :
Flange Mount