Référence fabricant
IXTH11P50
Single P-Channel 500 V 750 mOhm 300 W Power Mosfet - TO-247 AD
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| Nom du fabricant: | IXYS | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :30 par Tube Style d'emballage :TO-247-3 Méthode de montage :Through Hole | ||||||||||
| Code de date: | 2422 | ||||||||||
IXYS IXTH11P50 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
SUBJECT: Assembled Device Marking Format Changes and Outer Box/Bag Label Format Changes - Change to the assembled device marking format The change affects the date code and tracking number identification. This change does not affect the form, fit or function of the product. See attached for more details - Change to the box label format: The paper sticker label found on the outer box or bag will see a format change that incorporates the Littelfuse logo along with the IXYS logo. The printed information remains the same (PN, Qty, Lot #, date code, country of origin). The change allows for a improved readability. This change does not affect the form, fit or function of the product. REMARKS: This changes from the original IXYS Corporation marking/labeling format to the new IXYS LLC-USA format is being done to conform to the SAP product management system requirements of our parent company Littelfuse Corporation.
DESCRIPTION OF CHANGE: As a part of Littelfuse endeavors to improve the manufacturing footprint, it has been decided to introduce a new TO-247 backend manufacturing ASEWH in China for the affected part numbers listed below. With this additional capacity to support the upcoming customer demands. Country of origin for TO247 will possibly be Korea, Philippines and China
Product Change Notification for Littelfuse MOSFET DISCRETE, IGBT DISCRETE, Thyristor and Diodes in TO-247 package add new manufacturing location DESCRIPTION OF CHANGE: As a part of Littelfuse endeavors to improve the manufacturing footprint, it has been decided to introduce a new TO-247 backend manufacturing ASEWH in China for the affected part numbers listed attached. With this additional capacity to support the upcoming customer demands. Country of origin for TO247 will possibly be Korea, Philippines and China Form, fit, function changes: No change in the silicon dice used. We would like to notify you on the differences between the existing manufacture and new manufacture.
Statut du produit:
IXYS IXTH11P50 - Caractéristiques techniques
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 500V |
| Drain-Source On Resistance-Max: | 750mΩ |
| Rated Power Dissipation: | 300|W |
| Qg Gate Charge: | 130nC |
| Style d'emballage : | TO-247-3 |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
30 par Tube
Style d'emballage :
TO-247-3
Méthode de montage :
Through Hole