Référence fabricant
IXFA4N100Q
Single N-Channel 1000 Vds 3 Ohm 39 nC 150 W Mosfet - TO-263
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| Nom du fabricant: | IXYS | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2434 | ||||||||||
IXYS IXFA4N100Q - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
SUBJECT: Assembled Device Marking Format Changes and Outer Box/Bag Label Format Changes - Change to the assembled device marking format The change affects the date code and tracking number identification. This change does not affect the form, fit or function of the product. See attached for more details - Change to the box label format: The paper sticker label found on the outer box or bag will see a format change that incorporates the Littelfuse logo along with the IXYS logo. The printed information remains the same (PN, Qty, Lot #, date code, country of origin). The change allows for a improved readability. This change does not affect the form, fit or function of the product. REMARKS: This changes from the original IXYS Corporation marking/labeling format to the new IXYS LLC-USA format is being done to conform to the SAP product management system requirements of our parent company Littelfuse Corporation.
Statut du produit:
IXYS IXFA4N100Q - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 1000V |
| Drain-Source On Resistance-Max: | 3Ω |
| Rated Power Dissipation: | 150|W |
| Qg Gate Charge: | 39nC |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
IXYS is a state of the art leader in MOSFET technology through the IXFA series. This cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.
The ruggedness that this technology offers combined with a low resistance factor results in very low power dissipation, in low voltage, and high current power switching applications. This series features wide-ranging operating junction temperatures (–55 degrees C to 150 degrees C) and is ideal for applications that require large amounts of power.
By delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, IXYS firmly believes in innovation through its divisional focused approach. This has enabled IXYS to become well diversified in the consumer, military & aerospace, automotive and transportation markets.
Perfect for both commercial and industrial applications, the IXFA4N100Q (this part is lead free) has the capacity to operate at 1000 V within an operating temperature range of 150 degrees C. The net result translates to a lower resistance (RDS (on) = 3 Ohms). Avalanche rated, the IXFA4N100Q is able to reduce power dissipation levels to approximately 156 watts. The IXFA4N100Q provides high speed, robust efficiency combined with low on-resistance and cost-effectiveness all in a TO-263 package format.
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Méthode de montage :
Surface Mount