Référence fabricant
IRFR3806TRPBF
Single N-Channel 60 V 15.8 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :2000 par Reel Style d'emballage :TO-252AA Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2305 | ||||||||||
Infineon IRFR3806TRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Subject Capacity extension for dedicated Gen10.7 products by introduction of additional wafer manufacturing site at SamsungElectronics Co. Ltd., Korea and Infineon Technologies Dresden, GermanyReason Extension of wafer manufacturing sites for additional capacity to ensure continuity of supply and flexible manufacturingDescription Old - Wafer Production Location- Newport Wafer Fab Ltd.(NWF Ltd.), United Kingdom- Vanguard International Semiconductor Corporation, Taiwan- Tower Semiconductor Ltd., Israel- Infineon TechnologiesDresden GmbH, Dresden, GermanyNew - Wafer Production Location- Existing Wafer ProductionLocations see �old�- Samsung Electronics Co, Ltd., Korea- Infineon TechnologiesDresden GmbH, GermanyImpact of changeNO change on electrical, thermal parameters and reliability as proven via product qualification and characterizationNO change in existing datasheet parametersNO change in quality and reliability. Processes are optimized to meet product performance according to already applied Infineon specificationTime scheduleIntended start of delivery 2022-04-01 (or earlier based on customer approval)
Statut du produit:
Infineon IRFR3806TRPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 15.8mΩ |
| Rated Power Dissipation: | 71|W |
| Qg Gate Charge: | 30nC |
| Style d'emballage : | TO-252AA |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
Benefits:
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche SOA
- Enhanced body diode dV/dt and dI/dt Capability
Applications:
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits
Emballages disponibles
Qté d'emballage(s) :
2000 par Reel
Style d'emballage :
TO-252AA
Méthode de montage :
Surface Mount