IRFP4568PBF in Tube by Infineon | Mosfet | Future Electronics
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Référence fabricant

IRFP4568PBF

Single N-Channel 150 V 5.9 mOhm 151 nC HEXFET® Power Mosfet - TO-247-3AC

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date: 2243
Product Specification Section
Infineon IRFP4568PBF - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 5.9mΩ
Rated Power Dissipation: 517|W
Qg Gate Charge: 151nC
Style d'emballage :  TO-247AC
Méthode de montage : Flange Mount
Fonctionnalités et applications
 

International Rectifier is a world leader in power management technology.

IR has announced a new range of trench HEXFET PowerMOSFETs featuring benchmark low on-state resistance RDS(on) in a TO-247 package for synchronous rectification, active ORing and industrial applications including high power DC motors, DC to AC inverters and power tools.

 

The IRFP4568PBF features an improvement of up to 50 percent in RDS(on) over competing devices, eliminating the need for large and expensive packages typically used in industrial applications, and cutting overall system cost. Moreover, the low RDS(on) results in lower conduction losses and improved system efficiency.

The IRFP4568PBF is an N-Channel, 150V MOSFET, with a current rating of 171 Amps. It is constructed in a TO-247 package and provides a max RDS(on) rating of 5.9 Mohm. The device is qualified to industrial grade and moisture sensitivity level 1 (MSL1). The IRFP4568PBF is in offered lead free and are RoHS compliant.

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Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
12 Semaines
Commande minimale :
400
Multiples de :
25
Total 
828,00 $
USD
Quantité
Prix unitaire
25
$2.14
100
$2.10
375
$2.07
625
$2.06
1 250+
$2.02