Référence fabricant
IRFP064NPBF
Single N-Channel 55 V 8 mOhm 32 nC HEXFET® Power Mosfet - TO-247-3AC
Infineon IRFP064NPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
Infineon IRFP064NPBF - Caractéristiques techniques
Fet Type: | Dual N-Ch |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 8mΩ |
Rated Power Dissipation: | 200|W |
Qg Gate Charge: | 32nC |
Méthode de montage : | Through Hole |
Fonctionnalités et applications
International Rectifier has set an important precedent in MOSFET technology through the IRFP series. This cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.
The ruggedness that this technology offers, combined with its low package cost, has made the MOSFET universally preferred for all commercial-industrial applications. The robust design is ideal for applications that require large amounts of power.
By delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, Vishay offers unique technological solutions. Ideal for AC-DC servers, laptop adapters, and desktop power supplies, Vishay strives to meet ongoing customer demand backed by industry-leading quality.
Perfect for both commercial and industrial applications, the IRFP064N (this part is lead free) has the capacity to operate at 55V within an operating temperature range of 150 degrees C. The net result translates to a lower resistance (RDS (on) = 8.0 mOhms). Repetitively avalanche rated, the IRFP640N is able to reduce power dissipation levels to approximately 50 watts. The IRFP640N provides high speed, robust efficiency combined with low on-resistance and cost-effectiveness all in a TO-247 package format.
Emballages disponibles
Qté d'emballage(s) :
25 par Tube
Méthode de montage :
Through Hole