Référence fabricant
IRF640NPBF
Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-220-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) | ||||||||||
| Code de date: | 2344 | ||||||||||
Infineon IRF640NPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
Infineon IRF640NPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 0.15Ω |
| Rated Power Dissipation: | 150W |
| Qg Gate Charge: | 67nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 18A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 23ns |
| Rise Time: | 19ns |
| Fall Time: | 5.5ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 9.02mm |
| Length: | 10.67mm |
| Input Capacitance: | 1160pF |
| Style d'emballage : | TO-220-3 (TO-220AB) |
Fonctionnalités et applications
The IRF640NPBF is a Fifth Generation HEXFET® Power MOSFET that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. For more information, please see the datasheet.
The IRF640NPBF comes in a TO-220 package. PBF indicates Leadfree.Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)