Référence fabricant
FQT5P10TF
P-Channel 100 V 1.05 Ohm Surface Mount Mosfet - SOT-223
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :4000 par Reel Style d'emballage :SOT-223 (TO-261-4, SC-73) Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2421 | ||||||||||
onsemi FQT5P10TF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
onsemi FQT5P10TF - Caractéristiques techniques
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 1.05Ω |
| Rated Power Dissipation: | 2|W |
| Qg Gate Charge: | 6.3nC |
| Style d'emballage : | SOT-223 (TO-261-4, SC-73) |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The FQT5P10TF is a P-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Features:
- -1.0 A, -100 V
- RDS(on) = 1.05 Ω @VGS = -10 V
- Low gate charge ( typical 6.3 nC)
- Low Crss ( typical 18 pF)
- Fast switching
- Improved dv/dt capability
Applications:
- TBA
View the complete FQT5 series of Mosfets
Emballages disponibles
Qté d'emballage(s) :
4000 par Reel
Style d'emballage :
SOT-223 (TO-261-4, SC-73)
Méthode de montage :
Surface Mount