onsemi | FDN337N

The FDN337N is a 30 V 65 mΩ SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using  high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and  other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package

Features:

• 2.2 A, 30 V, RDS(ON) = 0.065 Ω @ VGS = 4.5 V, RDS(ON) = 0.082 Ω @ VGS = 2.5 V.
• Industry standard outline SOT-23 surface mount package
• High density cell design for extremely low RDS(ON).
• Exceptional on-resistance and maximum DC current capability

Applications:

• Load switch
• Battery protection
• Power management