Référence fabricant
FS380R12A6T4LBBPSA1
1200V, 380A, IGBT, HybridPACK Drive, Module
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :6 par Tray Style d'emballage :Module Méthode de montage :Chassis Mount | ||||||||||
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Infineon FS380R12A6T4LBBPSA1 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Introduction of an additional wafer production and wafer test location at Infineon Technologies (Kulim) Sdn. Bhd., Kulim, Malaysia for IGBT4A, and change of wafer diameter from 150 mm to 200 mm for EC4A diodes in 1200V modules Reason/Motivation: For IGBT4A, expansion of wafer production to assure continuity of supply and enable flexible manufacturing. For EC4A, the 200 mm wafer manufacturing technology is the 'state of the art' wafer manufacturing technology at Infineon. Therefore, the diodes will be shifted from 150 mm wafer diameter to 200 mm wafer diameter. Time schedule Final qualification report available First samples available on request Intended start of delivery [1] 2022-03-01 Last order date (LOD) [2] 2021-11-30 Last delivery date (LDD) [3] 2022-04-30
Statut du produit:
Infineon FS380R12A6T4LBBPSA1 - Caractéristiques techniques
| CE Voltage-Max: | 1200V |
| Power Dissipation-Tot: | 870W |
| Gate - Emitter Voltage: | 20V |
| Pulsed Collector Current: | 760A |
| Collector - Emitter Saturation Voltage: | 1.6V |
| Turn-on Delay Time: | 0.13µs |
| Turn-off Delay Time: | 0.47µs |
| Qg Gate Charge: | 1750nC |
| Leakage Current: | 400nA |
| Input Capacitance: | 19nF |
| Operating Temp Range: | -40°C to +150°C |
| No of Terminals: | 33 |
| Style d'emballage : | Module |
| Méthode de montage : | Chassis Mount |
Emballages disponibles
Qté d'emballage(s) :
6 par Tray
Style d'emballage :
Module
Méthode de montage :
Chassis Mount