Référence fabricant
MUN5335DW1T1G
MUN Series 50 V 100 mA 2.2 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :SOT-363 (SC-70-6, SC-88) Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2428 | ||||||||||
onsemi MUN5335DW1T1G - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
onsemi MUN5335DW1T1G - Caractéristiques techniques
| Polarity: | NPN/PNP |
| R1, R2: | 2.2kΩ |
| Output Current-Max: | 100mA |
| Supply Voltage: | 50|V |
| Style d'emballage : | SOT-363 (SC-70-6, SC-88) |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The MUN5335DW1T1G is a part of MUN series NPN/PNP dual bias resistor transistor. It has a storage temperature ranging from -55°C to +150°C and its available in SOT-363 package.
The Dual Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The Dual Bipolar Digital Transistor eliminates these individual components by integrating them into a single device.
Features:
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- Available in 8 mm, 7 inch/3000 Unit Tape and Reel
- Pb-Free Package is Available
- AEC-Q101 Qualified and PPAP Capable
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SOT-363 (SC-70-6, SC-88)
Méthode de montage :
Surface Mount