Référence fabricant
MUN5215DW1T1G
MUN5215DW1 Series 1.4 V 100 mA SMT NPN-Pre-Biased Digital Transistor - SOT-363
Product Specification Section
onsemi MUN5215DW1T1G - Spécifications du produit
Informations de livraison:
L'article ne peut être envoyé à certains pays. Voir la liste
L'article ne peut pas être envoyé aux pays suivants:
ECCN:
EAR99
Informations PCN:
N/A
Fichier
Date
Statut du produit:
Actif
Actif
onsemi MUN5215DW1T1G - Caractéristiques techniques
Attributes Table
Polarity: | NPN-Pre-Biased |
R1, R2: | 10kΩ |
Collector Current Max: | 100mA |
Output Current-Max: | 100mA |
CE Voltage-Max: | 50V |
Supply Voltage: | 1.4V |
Power Dissipation-Tot: | 256mW |
Collector - Base Voltage: | 50V |
Collector - Emitter Saturation Voltage: | 0.25V |
DC Current Gain-Min: | 160 |
Configuration: | Dual |
Collector - Current Cutoff: | 100nA |
Operating Temp Range: | -55°C to +150°C |
Style d'emballage : | SOT-363 (SC-70-6, SC-88) |
Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The MUN5215DW1T1G is a Low power NPN Silicon Surface Mount Transistors with Dual Monolithic Bias Resistor Network; designed to replace a single device and it's external resistor bias network.
It's monolithic bias network consisting of two resistors which eliminates these individual components by integrating them in to a single device.
Features:
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- AEC−Q101 Qualified and PPAP Capable
- Pb−Free Packages are Available
Applications:
- Supply line switches
- Battery charger switches
- High-side switches for LEDs, drivers and backlights
- Portable equipment
Pricing Section
Stock global :
27 000
États-Unis:
27 000
Sur commande :
0
Délai d'usine :
10 Semaines
Quantité
Prix unitaire
3 000
$0.0285
9 000
$0.0277
15 000
$0.0274
30 000
$0.027
60 000+
$0.0263
Product Variant Information section
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SOT-363 (SC-70-6, SC-88)
Méthode de montage :
Surface Mount