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Référence fabricant
MMUN2211LT1G
MMUN2211L Series 1.8 V 100 mA SMT NPN-Pre-Biased Digital Transistor - SOT-23
Product Specification Section
onsemi MMUN2211LT1G - Spécifications du produit
Informations de livraison:
L'article ne peut être envoyé à certains pays. Voir la liste
L'article ne peut pas être envoyé aux pays suivants:
ECCN:
EAR99
Informations PCN:
N/A
Fichier
Date
Statut du produit:
Actif
Actif
onsemi MMUN2211LT1G - Caractéristiques techniques
Attributes Table
Polarity: | NPN-Pre-Biased |
R1, R2: | 10kΩ/10kΩ |
Collector Current Max: | 100mA |
Output Current-Max: | 100mA |
CE Voltage-Max: | 50V |
Supply Voltage: | 1.8V |
Power Dissipation-Tot: | 400mW |
Collector - Base Voltage: | 50V |
Collector - Emitter Saturation Voltage: | 0.25V |
DC Current Gain-Min: | 35 |
Configuration: | Single |
Collector - Current Cutoff: | 100nA |
Operating Temp Range: | -55°C to +150°C |
Style d'emballage : | SOT-23 (SC-59,TO-236) |
Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The MMUN2211LT1G is a Low power NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network; designed to replace a single device and it's external resistor bias network.
It's monolithic bias network consisting of two resistors which eliminates these individual components by integrating them into a single device.
Features:
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- AEC−Q101 Qualified and PPAP Capable
- Pb−Free Packages are Available
Applications:
- Supply line switches
- Battery charger switches
- High-side switches for LEDs, drivers and backlights
- Portable equipment
Pricing Section
Stock global :
0
États-Unis:
0
Délai d'usine :
11 Semaines
Quantité
Prix unitaire
3 000
$0.0109
9 000
$0.0105
30 000
$0.0102
60 000
$0.0099
120 000+
$0.0096
Product Variant Information section
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SOT-23 (SC-59,TO-236)
Méthode de montage :
Surface Mount