onsemi | MBRA340T3G

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifiers state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.

Features:

• Compact Surface Mountable Package with J-Bent Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Guardring for Stress Protection
• All External Surfaces are Corrosion Resistant and Terminal Leads are Readily Solderable
• Cathode Lead Indicated by polarity Band
• ESD Ratings, Machine Model = C, Human Body Model = 3B
• Device Meets MSL 1 Requirements

Applications:

• Polarity Protection