Manufacturer Part #
MR2A08AYS35
MR2A08 Series 512 K x 8 Bit 3.3 V 35 ns Asynchronous MRAM Memory - TSOP II-44
Product Specification Section
Everspin Technologies MR2A08AYS35 - Product Specification
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ECCN:
EAR99
PCN Information:
N/A
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Everspin Technologies MR2A08AYS35 - Technical Attributes
Attributes Table
Memory Density: | 4Mb |
Interface Type: | Parallel |
Memory Organization: | 512 K x 8 |
Supply Voltage-Nom: | 3.3V |
Access Time-Max: | 35ns |
Temperature Range: | 0°C to 70°C |
Package Style: | TSOP II-44 |
Mounting Method: | Surface Mount |
Features & Applications
The MR2A08AYS35 is a magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. It is available small footprint 400-mil, 44-lead plastic small-outline TSOP type 2 package.
This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. The data is always non-volatile for greater than 20 years. and is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Features:
- Fast 35ns Read/Write Cycle
- SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign
- Unlimited Read & Write Endurance
- Data Always Non-volatile for >20 years at Temperature
- One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in System for Simpler, More Efficient Design
- Replace battery-backed SRAM solutions with MRAM to eliminate battery assembly, improving reliability
- 3.3 Volt Power Supply
- Automatic Data Protection on Power Loss
- Commercial, Industrial, Automotive Temperatures
- RoHS-Compliant SRAM TSOP2 Package
- AEC-Q100 Grade 1 Qualified
View the available MR2A08A series of MRAMs
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
135+
$20.68
Product Variant Information section
Available Packaging
Package Qty:
135 per Tray
Package Style:
TSOP II-44
Mounting Method:
Surface Mount