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Manufacturer Part #

SCT2750NYTB

N-Channel 1700 V 0.75 Ohm Surface Mount SiC Power Mosfet - TO-268-2

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
ROHM SCT2750NYTB - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1700V
Drain Current: 5.9A
Input Capacitance: 275pF
Power Dissipation: 57W
Package Style:  TO-268 (D3PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
800
Multiple Of:
400
Total
$2,744.00
USD
Quantity
Unit Price
400
$3.48
800+
$3.43
Product Variant Information section