Manufacturer Part #
NP36P06KDG-E1-AY
NP36P06KDG Series P-Channel 60 V 29.5 mOhm 54 nC Switching MOSFET - TO-263
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| Mfr. Name: | Renesas | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:800 per Cut Tape Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
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Product Specification Section
Renesas NP36P06KDG-E1-AY - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
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Renesas NP36P06KDG-E1-AY - Technical Attributes
Attributes Table
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 29.5mΩ |
| Rated Power Dissipation: | 56|W |
| Qg Gate Charge: | 54nC |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Features & Applications
The NP36P06KDG-E1-AY is a part of NP36P06KDG series P-Channel switching power MOSFET. It has a storage temperature ranging from -55°C to +175°C and its available in TO-263 package.
This P-channel MOS Field Effect Transistor is designed for high current switching applications.
Features:
- Super low on-state resistance
- RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A)
- RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A)
- Low input capacitance
- Ciss = 3100 pF TYP
View the available List of P-Channel switching power MOSFET
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Web Price
1
$1.42
10
$1.33
40
$1.28
125
$1.25
400+
$1.18
Product Variant Information section
Available Packaging
Package Qty:
800 per Cut Tape
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount