Manufacturer Part #
IRFR3806TRPBF
Single N-Channel 60 V 15.8 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2000 per Reel Package Style:TO-252AA Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2334 | ||||||||||
Infineon IRFR3806TRPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Subject Capacity extension for dedicated Gen10.7 products by introduction of additional wafer manufacturing site at SamsungElectronics Co. Ltd., Korea and Infineon Technologies Dresden, GermanyReason Extension of wafer manufacturing sites for additional capacity to ensure continuity of supply and flexible manufacturingDescription Old - Wafer Production Location- Newport Wafer Fab Ltd.(NWF Ltd.), United Kingdom- Vanguard International Semiconductor Corporation, Taiwan- Tower Semiconductor Ltd., Israel- Infineon TechnologiesDresden GmbH, Dresden, GermanyNew - Wafer Production Location- Existing Wafer ProductionLocations see �old�- Samsung Electronics Co, Ltd., Korea- Infineon TechnologiesDresden GmbH, GermanyImpact of changeNO change on electrical, thermal parameters and reliability as proven via product qualification and characterizationNO change in existing datasheet parametersNO change in quality and reliability. Processes are optimized to meet product performance according to already applied Infineon specificationTime scheduleIntended start of delivery 2022-04-01 (or earlier based on customer approval)
Part Status:
Infineon IRFR3806TRPBF - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 15.8mΩ |
| Rated Power Dissipation: | 71|W |
| Qg Gate Charge: | 30nC |
| Package Style: | TO-252AA |
| Mounting Method: | Surface Mount |
Features & Applications
Benefits:
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche SOA
- Enhanced body diode dV/dt and dI/dt Capability
Applications:
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits
Available Packaging
Package Qty:
2000 per Reel
Package Style:
TO-252AA
Mounting Method:
Surface Mount