Manufacturer Part #
IPB80N06S2L06ATMA2
Single N-Channel 55 V 6.3 mOhm 150 nC OptiMOS™ Power Mosfet - D2PAK
Product Specification Section
Infineon IPB80N06S2L06ATMA2 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
Active
Infineon IPB80N06S2L06ATMA2 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 6mΩ |
Rated Power Dissipation: | 250W |
Qg Gate Charge: | 114nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 80A |
Turn-on Delay Time: | 11ns |
Turn-off Delay Time: | 60ns |
Rise Time: | 21ns |
Fall Time: | 20ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 1.6V |
Technology: | OptiMOS |
Input Capacitance: | 3800pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
15,000
USA:
15,000
On Order:
0
Factory Lead Time:
12 Weeks
Quantity
Unit Price
1,000
$1.29
2,000
$1.28
3,000+
$1.27
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount