Manufacturer Part #
FDMS86201
PT5 120V/20V NCH POWERTRENCH MOSFET
Product Specification Section
onsemi FDMS86201 - Product Specification
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
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onsemi FDMS86201 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 120V |
Drain-Source On Resistance-Max: | 21.5mΩ |
Rated Power Dissipation: | 104W |
Qg Gate Charge: | 46nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 49A |
Turn-on Delay Time: | 24ns |
Turn-off Delay Time: | 44ns |
Rise Time: | 16ns |
Fall Time: | 15ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4V |
Technology: | PowerTrench |
Height - Max: | 1.1mm |
Length: | 5.1mm |
Input Capacitance: | 2056pF |
Package Style: | POWER 56-8 |
Mounting Method: | Surface Mount |
Features & Applications
The FDMS86201 is a N-Channel MOSFET.
Features:
- Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A
- Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
Applications:
- DC-DC Conversion
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
34 Weeks
Quantity
Unit Price
3,000+
$1.04
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Package Style:
POWER 56-8
Mounting Method:
Surface Mount