text.skipToContent text.skipToNavigation

Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. NTH4L015N065SC1

onsemi | NTH4L015N065SC1

Manufacturer Part #

NTH4L015N065SC1

NTH4L015N065SC1 Series N-Channel 650 V 18 mOhm Silicon Carbide MOSFET - TO-247-4

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2220
Product Specification Section
onsemi NTH4L015N065SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 142A
Input Capacitance: 4790pF
Power Dissipation: 500W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
28
USA:
28
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
1
Multiple Of:
1
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$16.08
USD
Quantity
Web Price
1
$16.08
5
$15.87
25
$15.66
50
$15.57
150+
$15.31
Product Variant Information section