Infineon — CoolSiC™ 650 V to 2000 V MOSFETs

Infineon CoolSiC™ MOSFETs

Portfolio comes in 650 V, 750 V, 1200 V, 1700 V and 2000 V voltage classes

Infineon’s CoolSiC™ portfolio of MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC™ MOSFET portfolio comes in 650 V, 750 V, 1200 V, 1700 V and 2000 V voltage classes, with on-resistance ratings from 7 mΩ up to 1000 mΩ.

CoolSiC™ trench technology
CoolSiC™ trench technology enables a flexible parameter-set, which is used for implementation of application-specific features in respective product portfolios, e.g.: gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

Block Diagram

Voltage Classes

650 V
Infineon’s range of 650 V CoolSiC™ MOSFETs offer optimized switching behaviors at high currents and low capacitances and are designed for a variety of industrial applications including, servers, telecom, motor drives, and more.

750 V and 1200 V
The 750 V and 1200 V MOSFET range is available for both industrial and automotive qualified applications, such as on-board charger/PFC, auxiliary inverters, and uninterruptible power supply (UPS).

1700 V
The selection of 1700 V CoolSiC™ MOSFET is offered with flyback typology that can be used in energy storage systems, fast EV charging, power management (SMPS, and solutions for solar energy systems.

2000 V
The 2000 V CoolSiC™ MOSFET offers increased power density and voltage margin, designated for high voltage applications such as fast EV charging, and solutions for solar energy systems.
 

Packages

CoolSiC™ MOSFETs in discrete packages are ideally suited for both hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies, and DC-DC converters or DC-AC inverters. An excellent immunity against unwanted parasitic turn-on effects creates a benchmark in low dynamic loss, even at zero volt turn-off voltage in bridge topologies. TheirTO- and SMD offering comes also with Kelvin-source pins for optimized switching performance.

Infineon completes the SiC discrete offering with a range of selected driver IC products fulfilling the needs of the ultrafast SiC MOSFET switching feature. Together, CoolSiC™ MOSFETs and EiceDRIVER™ gate driver ICs leverage the advantage of SiC technology: improved efficiency, space, and weight savings, part count reduction, enhanced system reliability.

CoolSiC™ MOSFETs in discrete housings come along with a fast internal freewheeling diode, thus making hard switching without additional diode chips possible. Due to its unipolar character, the MOSFETs show very low, temperature-independent switching and low conduction losses, especially under partial load conditions.

Their unique silicon carbide (SiC) CoolSiC™ MOSFET discrete products from 650 V up to 2000 V are ideally suited for hard- and resonant-switching topologies such as LLC and ZVS, and can be driven like an IGBT or CoolMOS™, using standard drivers. These robust devices offer superior gate oxide reliability enabled by state-of-the-art trench design, best-in-class switching and conduction losses, highest transconductance level (gain), threshold voltage of Vth = 4 V and short-circuit robustness.