Manufacturer Part #
VSMY2850G
850 nm 100 mA ±10° Surface Mount High Speed Infrared Emitting Diode
Product Specification Section
Vishay VSMY2850G - Product Specification
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
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Vishay VSMY2850G - Technical Attributes
Attributes Table
Wavelength: | 850nm |
Angle of Half Intensity: | ±10° |
Intensity: | 100mW/cm2 |
Forward (Drive) Current: | 100mA |
Forward Voltage: | 1.65V |
Mounting Method: | Surface Mount |
Features & Applications
The VSMY2850G is a 850 nm peak wavelength, high speed infrared emitting diode.
This diode has designed based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting.
Features:
- Dimensions 2.3 x 2.3 x 2.8 mm
- 850 nm peak wavelength
- High reliability
- High radiant power and very high radiant intensity
- Angle of half sensitivity Φ = ±10°
- Suitable for high pulse current operation
Applications:
- IrDA compatible data transmission
- Miniature light barrier
- Photointerrupters and optical switch
- Emitter source for proximity sensors
- IR touch panels and IR illumination
Pricing Section
Global Stock:
0
USA:
0
Factory Lead Time:
20 Weeks
Quantity
Unit Price
6,000+
$0.275
Product Variant Information section
Available Packaging
Package Qty:
6000 per Reel
Mounting Method:
Surface Mount