Manufacturer Part #
IMBG120R045M1HXTMA1
1200 V 47A 227 W Surface Mount N-Channel SiC Trench MOSFET - PG-TO263-7-12
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-7 (D2PAK7) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon IMBG120R045M1HXTMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IMBG120R045M1HXTMA1 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 47A |
| Input Capacitance: | 1527pF |
| Power Dissipation: | 227W |
| Operating Temp Range: | -55°C to +175°C |
| Package Style: | TO-263-7 (D2PAK7) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
20 Weeks
Quantity
Web Price
1,000+
$6.13
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-7 (D2PAK7)
Mounting Method:
Surface Mount