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Manufacturer Part #

SIHD690N60E-GE3

E Series 600 V 6.4 A 700 mOhm Single N-Channel MOSFET - TO-252-3

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIHD690N60E-GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 700mΩ
Rated Power Dissipation: 62.5W
Qg Gate Charge: 8nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 6.4A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 19ns
Rise Time: 9ns
Fall Time: 22ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Input Capacitance: 347pF
Series: E
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
3000
Multiple Of:
75
Total
$1,830.00
USD
Quantity
Web Price
75
$0.68
300
$0.65
1,125
$0.625
2,250
$0.61
5,625+
$0.58
Product Variant Information section