Manufacturer Part #
NP83P06PDG-E1-AY
NP83P06PDG Series P-Channel 60 V 8.8 mOhm 190 nC Switching MosFet - TO-263
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| Mfr. Name: | Renesas | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:800 per Cut Tape Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Renesas NP83P06PDG-E1-AY - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Renesas NP83P06PDG-E1-AY - Technical Attributes
Attributes Table
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 8.8mΩ |
| Rated Power Dissipation: | 150|W |
| Qg Gate Charge: | 190nC |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Features & Applications
The NP83P06PDG-E1-AY is a part of NP83P06PDG series P-Channel switching power MOSFET. It has a storage temperature ranging from -55°C to +175°C and its available in TO-263 package.
The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features:
- Super low on-state resistance
- RDS(on)1 = 8.8 mΩ MAX. (VGS = −10 V, ID = −41.5 A)
- RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A)
- High current rating: ID(DC) = ±83 A
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Web Price
1
$2.11
10
$1.98
40
$1.91
125
$1.85
400+
$1.76
Product Variant Information section
Available Packaging
Package Qty:
800 per Cut Tape
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount