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Manufacturer Part #

IXTA32P20T

TrenchP Series 200 V 32 A 130 mOhm Single P-Channel MOSFET - TO-263-3

ECAD Model:
Mfr. Name: IXYS
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
IXYS IXTA32P20T - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 130mΩ
Rated Power Dissipation: 300W
Qg Gate Charge: 185nC
Gate-Source Voltage-Max [Vgss]: 15V
Drain Current: 32A
Turn-on Delay Time: 32ns
Turn-off Delay Time: 57ns
Rise Time: 15ns
Fall Time: 12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 14.5nF
Series: TrenchP
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
300
Multiple Of:
50
Total
$1,386.00
USD
Quantity
Unit Price
50
$4.71
150
$4.64
200
$4.62
500
$4.57
750+
$4.51
Product Variant Information section