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Manufacturer Part #

IXFK420N10T

N-Channel 100 V 420 A 2.6 mΩ GigaMOS HiPerFET Power Mosfet - TO-264AA

ECAD Model:
Mfr. Name: IXYS
Standard Pkg:
Product Variant Information section
Date Code: 2351
Product Specification Section
IXYS IXFK420N10T - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.0026Ω
Rated Power Dissipation: 1670|W
Qg Gate Charge: 670nC
Package Style:  TO-264
Mounting Method: Through Hole
Pricing Section
Global Stock:
300
Germany (Online Only):
300
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
25
Multiple Of:
25
Total
$329.75
USD
Quantity
Web Price
25
$13.19
50
$13.11
100
$13.04
125
$13.02
375+
$12.88
Product Variant Information section