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Manufacturer Part #

IPDQ60R010S7XTMA1

IPDQ60R Series 600 V 50 A 694 W 10 mOhm Single N-Channel MOSFET - PG-HDSOP-22

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPDQ60R010S7XTMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 10mΩ
Rated Power Dissipation: 694W
Qg Gate Charge: 318nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 50A
Turn-on Delay Time: 50ns
Turn-off Delay Time: 180ns
Rise Time: 5ns
Fall Time: 9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: CoolMOS
Input Capacitance: 11987pF
Series: CoolMOS
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
750
Multiple Of:
750
Total
$9,780.00
USD
Quantity
Unit Price
750+
$13.04
Product Variant Information section