Manufacturer Part #
BSC320N20NS3GATMA1
Single N-Channel 200 V 32 mOhm 22 nC OptiMOS™ Power Mosfet - TDSON-8
Product Specification Section
Infineon BSC320N20NS3GATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
PCN UPDATE
06/28/2022 Details and Download
Updated information marked in BLUE TYPE Original PCN N� 2022-001-A dated 2022-05-30 Detailed change information Subject : Capacity extension and harmonization of mould compound at Tongfu Microelectronics Co. Ltd. for PG-TDSON-8 package Reason: Expansion of assembly and test production to cover increasing customer demand, and enable flexible manufacturing
Assembly Site Change
06/06/2022 Details and Download
Part Status:
Active
Active
Infineon BSC320N20NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 200V |
Drain-Source On Resistance-Max: | 32mΩ |
Rated Power Dissipation: | 125W |
Qg Gate Charge: | 22nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 36A |
Turn-on Delay Time: | 14ns |
Turn-off Delay Time: | 22ns |
Rise Time: | 9ns |
Fall Time: | 4ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3V |
Technology: | OptiMOS |
Height - Max: | 1.27mm |
Length: | 5.9mm |
Input Capacitance: | 1770pF |
Package Style: | TDSON-8 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
10,000
Germany (Online Only):
10,000
Factory Lead Time:
16 Weeks
Quantity
Unit Price
5,000+
$0.805
Product Variant Information section
Available Packaging
Package Qty:
5000 per Reel
Package Style:
TDSON-8
Mounting Method:
Surface Mount