Manufacturer Part #
IGC142T120T8RMX1SA2
1200V 150A IGBT4 die
Product Specification Section
Infineon IGC142T120T8RMX1SA2 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
File
Date
Labeling Change
01/11/2022 Details and Download
Introduction of additional lot number prefix �VA� besides existing prefix �1E� and �PF�.Reason:In order to avoid a potential limitation of weekly wafer lot starts due to restrictions in tracking capabilities, and thus, to secure future supply, it is necessary to implement an additional lot number prefix.
Part Status:
Active
Active
Infineon IGC142T120T8RMX1SA2 - Technical Attributes
Attributes Table
CE Voltage-Max: | 1200V |
Gate - Emitter Voltage: | 20V |
Pulsed Collector Current: | 450A |
Collector - Emitter Saturation Voltage: | 1.15V |
Leakage Current: | 120nA |
Input Capacitance: | 9300pF |
Operating Temp Range: | -40°C to +175°C |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
20 Weeks
Quantity
Web Price
1
$18.71
5
$18.46
20
$18.24
50
$18.10
125+
$17.82
Product Variant Information section
Available Packaging
Package Qty:
1 per Die