onsemi EliteSiC Schottky Diodes, 650 V
Offering higher efficiency and lower system costs
onsemi has extended its Silicon Carbide (SiC) diode portfolio with a new family of 650V EliteSiC Schottky diodes which provide excellent fast-switching performance and high efficiency in Power Factor Correction (PFC) circuits and boost converters.
The Schottky diodes' cutting-edge EliteSiC technology provides substantially better operating characteristics than an equivalent silicon-based diode offers. The 650V SiC diodes’ key features, such as zero reverse-recovery charge, low forward voltage, temperature-independent current stability, high surge capacity and positive temperature coefficient, result in superior switching operation with lower power losses, and support effortless paralleling of devices.
The reduction in power losses observed in onsemi's 650V Silicon Carbide diodes is due to the inherently low forward voltage as well as their zero reverse-recovery charge, giving improved efficiency in converter circuits. In addition, the faster reverse recovery of SiC diodes allows for higher switching speeds. This reduces the size of the system’s magnetics and other passive components, enabling engineers to realize designs which have higher power density, a smaller volume and lower total bill-of-materials cost.
onsemi's EliteSiC Schottky diodes feature a unique, patented termination structure which gives reliable operation and enhances stability and ruggedness. Additionally, the diodes offer the industry's highest unclamped inductive switching capability and lowest leakage currents.
The 650V EliteSiC diodes are offered in surface-mount DPAK and through-hole TO-220 and TO-247 packages.
Parts Available for Immediate Sampling
| Part Number | Forward Current | Reverse Current | Forward Voltage | Package Type | Sample Request |
| FFSP0865B | 8A | 0.073μA | 1.39V | TO−220−2LD | |
| FFSP2065B | 20A | 0.5μA | 1.38V | TO−220−2LD |
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onsemi EliteSiC MOSFETs, 650 V
EliteSiC MOSFETs use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
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