Infineon FF2MR12W3M1HB11BPSA1 1200 V CoolSiC™ MOSFET Sixpack
Featuring enhanced trench technology in EasyPACK 1B packaging with PressFIT contact technology
Infineon’s EasyPACK™ 1B 1200 V / 55 mΩ sixpack CoolSiC™ MOSFET module features outstanding module efficiency enabling system cost advantages.
Summary of Features - Best in Class packages with 12mm height
- Combination of leading edge WBG material and Easy module packages
- Very low module stray inductance
- Low and equal gate inductances
- Very symmetrical internal chip layouts
- Wide RBSOA
- 1200 V CoolSiC™ MOSFET with enhanced generation 1 trench technology
- Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V
- Extended maximum gate-source voltages of +23 V and -10 V
- Tvjop under overload condition up to 175°C
- PressFIT pins
| Benefits - Outstanding module efficiency which enables system cost advantages
- System efficiency improvement for reduced cooling requirements
- Enabling higher frequency to Increase power density
- Best cost performance ratio with reduced system costs
- Reduction of drift caused by dynamic components
Applications - Fast EV charging
- Servo motor drive and control
- Solutions for photovoltaic energy systems
- Uninterruptible Power Supplies (UPS)
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